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INTEGRATED CIRCUITS
DATA SHEET
TEA1113 Low voltage versatile telephone transmission circuit with dialler interface
Product specification Supersedes data of 1996 Feb 08 File under Integrated Circuits, IC03 1997 Mar 27
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
FEATURES * Low DC line voltage; operates down to 1.6 V (excluding polarity guard) * Voltage regulator with adjustable DC voltage * Provides a supply for external circuits * Symmetrical high impedance inputs (64 k) for dynamic, magnetic or piezo-electric microphones * Asymmetrical high impedance input (32 k) for electret microphones * DTMF input with confidence tone * MUTE input for pulse or DTMF dialling * Receiving amplifier for dynamic, magnetic or piezo-electric earpieces * Dynamic limitation in the transmit direction to prevent distortion of the transmit line and sidetone signals * AGC line loss compensation for microphone and earpiece amplifiers * LED on-hook/off-hook status indication * Microphone mute function available with switch. GENERAL DESCRIPTION APPLICATION
TEA1113
* Line powered telephone sets, cordless telephones, fax machines and answering machines.
The TEA1113 is a bipolar integrated circuit that performs all speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between speech and dialling. The IC operates at a line voltage down to 1.6 V DC (with reduced performance) to facilitate the use of telephone sets connected in parallel. A current (proportional to the line current and internally limited to 19.5 mA) is available to drive an LED which indicates the on-hook/off-hook status. The transmit signal on the line is dynamically limited to prevent distortion at high transmit levels for both the sending line and sidetone signals. The microphone amplifier can be disabled during speech condition by means of a microphone mute function. All statements and values refer to all versions unless otherwise specified.
QUICK REFERENCE DATA Iline = 15 mA; VEE = 0 V; RSLPE = 20 ; CDLS = 470 nF; AGC pin connected to VEE; Zline = 600 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL Iline ILED(max) VLN VLN(max)(p-p) ICC VCC Gvtrx PARAMETER line current operating range maximum supply current available DC line voltage maximum output voltage swing (peak-to-peak value) internal current consumption supply voltage for peripherals typical voltage gain range microphone amplifier receiving amplifier Gvtrx gain control range for microphone and receiving amplifiers with respect to Iline = 15 mA microphone amplifier gain reduction VMIC = 2 mV (RMS) VIR = 4 mV (RMS) Iline = 85 mA 38.8 19.3 - - - 5.8 51.8 31.3 - dB dB dB VCC = 3.2 V Ip = 0 mA CONDITIONS normal operation with reduced performance Iline = 18 mA Iline > 76 mA MIN. 11 1 - - 3.7 3.8 - 2.8 TYP. - - 0.6 19.5 4.0 4.65 1.3 3.2 MAX. 140 11 - - 4.3 - 1.6 - UNIT mA mA mA mA V V mA V
Gvtxm
-
80
-
dB
1997 Mar 27
2
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
ORDERING INFORMATION TYPE NUMBER TEA1113 TEA1113T BLOCK DIAGRAM PACKAGE NAME DIP16 SO16 DESCRIPTION plastic dual in-line package; 16 leads (300 mil) plastic small outline package; 16 leads; body width 3.9 mm
TEA1113
VERSION SOT38-4 SOT109-1
GAR
handbook, full pagewidth
QR 14
MUTE 8 16 VCC
15 IR 9
V- I
V- I
1 LN CURRENT REFERENCE
DTMF
7
ATT.
V- I
5 MIC+ MIC- 12
GAS
4 REG
V- I
11
DLS/MMUTE 6
DYNAMIC LIMITER
AGC CIRCUIT
LOW VOLTAGE CIRCUIT
TEA1113
LED DRIVER
13
10
3
2 SLPE
MBG018
VEE
AGC
ILED
Fig.1 Block diagram.
1997 Mar 27
3
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PINNING SYMBOL LN SLPE ILED REG GAS DLS/ MMUTE DTMF MUTE IR AGC MIC- MIC+ VEE QR GAR VCC PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DESCRIPTION positive line terminal slope (DC resistance) adjustment available output current to drive an LED line voltage regulator decoupling sending gain adjustment dynamic limiter timing adjustment and microphone mute input dual-tone multi-frequency input mute input to select speech or dialling mode (active LOW) receiving amplifier input automatic gain control - line loss compensation inverting microphone amplifier input non-inverting microphone amplifier input negative line terminal receiving amplifier output receive gain adjustment supply voltage for speech circuit and peripherals Fig.2 Pin configuration.
SLPE 2 ILED 3 REG 4
handbook, halfpage
TEA1113
LN 1
16 VCC 15 GAR 14 QR 13 VEE 12 MIC+ 11 MIC- 10 AGC 9 IR
MBG015
TEA1113
GAS 5 DLS/MMUTE 6 DTMF 7 MUTE 8
FUNCTIONAL DESCRIPTION All data given in this chapter are typical values, except when otherwise specified. Supply (pins LN, SLPE, VCC and REG) The supply for the TEA1113 and its peripherals is obtained from the telephone line. The ICs generate a stabilized reference voltage (Vref) between pins LN and SLPE. This reference voltage is equal to 3.7 V, is temperature compensated and can be adjusted by means of an external resistor (RVA). It can be increased by connecting the RVA resistor between pins REG and SLPE, or decreased by connecting the RVA resistor between pins REG and LN. The voltage at pin REG is used by the internal regulator to generate the stabilized reference voltage and is decoupled by a capacitor (CREG) which is connected to VEE. This capacitor, converted into an equivalent inductance (see Section "Set impedance"), realizes the set impedance conversion from its DC value (RSLPE) to its AC value 1997 Mar 27 4
(RCC in the audio-frequency range). The voltage at pin SLPE is proportional to the line current. Figure 3 illustrates the supply configuration. The IC regulates the line voltage at the pin LN, and it can be calculated as follows: V LN = V ref + R SLPE x I SLPE I SLPE = I line - I CC - I p - I = I LED + I sh Iline: line current ICC: current consumption of the IC Ip: supply current for peripheral circuits I*: current consumed between LN and VEE ILED: supply current for the LED component Ish: the excess line current shunted to SLPE (and VEE) via LN.
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1113
The preferred value for RSLPE is 20 . Changing RSLPE will affect more than the DC characteristics; it also influences the microphone and DTMF gains, the LED supply current characteristic, the gain control characteristics, the sidetone level and the maximum output swing on the line.
handbook, full pagewidthRline
RCC ILED LN from preamp 619 VCC ICC Ish ILED LED DRIVER REG CREG 4.7 F
MBG019
Iline
Ip CVCC 100 F peripheral circuits
Rexch
TEA1113
I*
Vexch SLPE ISLPE RSLPE 20 VEE
Fig.3 Supply configuration.
MGD188
handbook, halfpage
5.5
Vref (V)
4.5
(1)
(2)
3.5
(3)
2.5 104
105
106
RVA ()
107
(1) RVA between REG and SLPE. (2) No RVA. (3) RVA between REG and LN.
Fig.4 Reference voltage adjustment by a RVA resistor.
1997 Mar 27
5
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
The internal circuitry of the TEA1113 is supplied from pin VCC. This voltage supply is derived from the line voltage by means of a resistor (RCC) and must be decoupled by a capacitor CVCC. It may also be used to supply peripheral circuits such as dialling or control circuits. The VCC voltage depends on the current consumed by the IC and the peripheral circuits as shown by the formula (see also Figs 5 and 6). RCCint is the internal impedance of the voltage supply point, and Irec is the current consumed by the output stage of the earpiece amplifier. V CC = V CCO - R CCint x ( I p - I rec ) V CCO = V LN - R CC x I CC The DC line current flowing into the set is determined by the exchange supply voltage (Vexch), the feeding bridge resistance (Rexch), the DC resistance of the telephone line (Rline) and the reference voltage (Vref). With line currents below 8 mA, the internal reference voltage (generating Vref) is automatically adjusted to a lower value. This means that more sets can operate in parallel with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. At currents below 8 mA, the circuit has limited sending and receiving levels. This is called the low voltage area. Set impedance
TEA1113
In the audio frequency range, the dynamic impedance is mainly determined by the RCC resistor. The equivalent impedance of the circuits is illustrated in Fig.7. LED supply (pin ILED) The TEA1113 gives an on-hook/off-hook status indication. This is achieved by a current made available to drive an LED connected between pins ILED and LN. In the low voltage area, which corresponds to low line current conditions, no current is available for this LED. For line currents higher than a threshold current, the ILED current increases proportionally to the line current (with a ratio of one third).The ILED current is internally limited to 19.5 mA (see Fig.8). For 17 mA < Iline < 77 mA: I line - 17 I LED = --------------------3 This LED driver is referenced to SLPE. Consequently, all the ILED supply current will flow through the RSLPE resistor. The AGC characteristics are not disturbed (see Fig.3 for the supply configuration). Microphone amplifier (pins MIC+, MIC- and GAS) The TEA1113 has symmetrical microphone inputs. The input impedance between pins MIC+ and MIC- is 64 k (2 x 32 k). The voltage gain from pins MIC+/MIC- to pin LN is set to 51.8 dB (typ). The gain can be decreased by connecting an external resistor RGAS between pins GAS and REG. The adjustment range is 13 dB. A capacitor CGAS connected between pins GAS and REG can be used to provide a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAS x (RGASint // RGAS). RGASint is the internal resistor which sets the gain with a typical value of 69 k.
handbook, halfpage
RCCint
VCC
VCCO
Irec
PERIPHERAL CIRCUIT
IP
Automatic gain control is provided on this amplifier for line loss compensation. Dynamic limiter and microphone mute (pin DLS/MMUTE) The dynamic limiter only acts on the microphone channel, this is to prevent clipping of the line signal. To prevent distortion, the microphone gain is rapidly reduced when peaks on the line signal exceed an internally determined threshold level or when the current in the transmit output stage is insufficient. The time in which the gain reduction is realized is very short (attack time). The microphone channel stays in the reduced gain condition until the peaks 6
MBE792
VEE
Fig.5 VCC voltage supply for peripherals.
1997 Mar 27
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
on the line signal remain below the threshold level. The microphone gain then returns to its nominal value after a time determined by the capacitor CDLS (release time). The maximum output swing on the line depends on the DC voltage setting (Vref). The internal threshold level is automatically adapted. A LOW level on pin DLS/MMUTE inhibits the microphone inputs MIC+ and MIC- without affecting the DTMF and receiving inputs. Removing the LOW level from pin DLS/MMUTE provides the normal function of the microphone amplifier after a short time which is determined by capacitor CDLS. With the value of the capacitor at 470 nF, the release time is in the order of a few tenths of a millisecond. The microphone mute function can be realized by a simple switch as illustrated in Fig.9. Receiving amplifier (pins IR, GAR and QR) The receiving amplifier has one input (IR) and one output (QR). The input impedance between pin IR and pin VEE is 20 k. The voltage gain from pin IR to pin QR is fixed to 31.3 dB (typ). The gain can be decreased by connecting an external resistor RGAR between pins GAR and QR; the adjustment range is 12 dB. Two external capacitors CGAR (connected between GAR and QR) and CGARS (connected between GAR and VEE) ensure stability. The CGAR capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAR x (RGARint // RGAR). RGARint is the internal resistor which sets the gain with a typical value of 100 k. The relationship CGARS = 10 x CGAR must be fulfilled to ensure stability. The output voltage of the receiving amplifier is specified for continuous wave drive. The maximum output swing depends on the DC line voltage, the RCC resistor, the ICC current consumption of the circuit, the Ip current consumption of the peripheral circuits and the load impedance. Automatic gain control is provided on this amplifier for line loss compensation. Automatic gain control (pin AGC) The TEA1113 performs automatic line loss compensation. The automatic gain control varies the gain of the microphone amplifier and the gain of the receiving amplifier in accordance with the DC line current. The control range is 5.8 dB (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a DC resistance of 176 /km and an average attenuation of 1.2 dB/km).
TEA1113
The IC can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor RAGC between pins AGC and VEE. This resistor enables the Istart and Istop line currents to be increased (the ratio between Istart and Istop is not affected by the resistor). The AGC function is disabled when pin AGC is left open-circuit. Mute function (pin MUTE) The mute function performs the switching between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. When MUTE is HIGH, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled. DTMF amplifier (pin DTMF) When the DTMF amplifier is enabled, dialling tones may be sent on line. These tones can be heard in the earpiece at a low level (confidence tone). The TEA1113 has an asymmetrical DTMF input. The input impedance between DTMF and VEE is 20 k. The voltage gain from pin DTMF to pin LN is 25.4 dB. When the resistor RGAS is connected, to decrease the microphone gain, the DTMF gain varies in the same way (the DTMF gain is 26.4 dB lower than the microphone gain with no AGC control). The automatic gain control has no effect on the DTMF amplifier. Sidetone suppression The TEA1113 anti-sidetone network comprising RCC // Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.10) suppresses the transmitted signal in the earpiece. Maximum compensation is obtained when the following conditions are fulfilled: R SLPE x R ast1 = R CC x ( R ast2 + R ast3 ) ( R ast2 x ( R ast3 + R SLPE ) ) k = ---------------------------------------------------------------------( R ast1 x R SLPE ) Z bal = k x Z line The scale factor k is chosen to meet the compatibility with a standard capacitor from the E6 or E12 range for Zbal.
1997 Mar 27
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
In practice, Zline varies considerably with the line type and the line length. Therefore, the value chosen for Zbal should be for an average line length which gives satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Zbal and the impedance of the average line. The anti-sidetone network for the TEA1113 (as shown in Fig.14) attenuates the receiving signal from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range. A Wheatstone bridge configuration (see Fig.11) may also be used. More information on the balancing of an anti-sidetone bridge can be obtained in our publication "Applications Handbook for Wired Telecom Systems, IC03b", order number 9397 750 00811.
TEA1113
handbook, halfpage
LN RP REG CREG 4.7 F RCC 619 VCC CVCC 100 F
MBE788
LEQ Vref SLPE RSLPE 20 VEE
Leq = CREG x RSLPE x RP; RP = internal resistance; RP = 15.5 k.
Fig.7 Equivalent impedance between LN and VEE.
handbook, halfpage
4
MBG016
Ip (mA) 3
2
(2) 1
(1)
0 0 1 2 3 VCC (V) 4
(1) With RVA resistor. (2) Without RVA resistor.
Fig.6
Typical current IP available from VCC for peripheral circuits at Iline = 15 mA.
1997 Mar 27
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1113
handbook, halfpage
100
MBE784
I (mA) 80 ISLPE
handbook, halfpage
DLS/MMUTE RDLS
60
CDLS
3.3 k
40
Ish
470 nF
20
ILED
VEE
MBG017
0 0 20 40 60 80 100 Iline (mA)
Fig.8 Available current to drive an LED.
Fig.9 Microphone mute function.
handbook, full pagewidth
LN
Zline
RCC
Rast1
VEE
Im
IR Zir Rast2
RSLPE Rast3 SLPE Zbal
MBE787
Fig.10 Equivalent circuit of TEA1113 anti-sidetone bridge.
1997 Mar 27
9
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1113
handbook, full pagewidth
LN
Zline
RCC
Zbal
VEE
Im
IR Zir
RSLPE
Rast1 RA SLPE
MBE786
Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VLN PARAMETER positive continuous line voltage repetitive line voltage during switch-on or line interruption Vn(max) Iline Ptot maximum voltage on pins ILED, SLPE maximum voltage on all other pins line current total power dissipation TEA1113 TEA1113T Tstg Tamb IC storage temperature operating ambient temperature RSLPE = 20 ; see Figs 12 and 13 Tamb = 75 C; see Figs 12 and 13 - - -40 -25 625 416 +125 +75 mW mW C C CONDITIONS MIN. VEE - 0.4 VEE - 0.4 VEE - 0.4 VEE - 0.4 - MAX. 12.0 13.2 VLN + 0.4 VCC + 0.4 140 V V V V mA UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air (TEA1113) thermal resistance from junction to ambient in free air mounted on epoxy board 40.1 x 19.1 x 1.5 mm (TEA1113T) VALUE 80 130 UNIT K/W K/W
1997 Mar 27
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1113
handbook, halfpage
150
MBE782
Iline (mA)
(4) (3) (2) (1)
110
LINE (1) (2) (3) (4)
Tamb (C) 45 55 65 75
Ptot (mW) 1000 875 750 625
70
30 2 4 6 8 10 12 VLN - VSLPE (V)
Fig.12 Safe operating area (TEA1113).
MLC202
handbook, halfpage
150
I LN
(mA) 130
110 (1) 90 (2) 70 (3) (4) 50
LINE (1) (2) (3) (4)
Tamb (C) 45 55 65 75
Ptot (mW) 666 583 500 416
30 2 4 6 8 10 12 V LN V SLPE (V)
Fig.13 Safe operating area (TEA1113T).
1997 Mar 27
11
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1113
CHARACTERISTICS Iline = 15 mA; VEE = 0 V; RSLPE = 20 ; CDLS = 470 nF; AGC pin connected to VEE; Zline = 600 ; f = 1 kHz; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply (pins VLN, VCC, SLPE and REG) Vref VLN stabilized voltage between LN and SLPE DC line voltage Iline = 1 mA Iline = 4 mA Iline = 15 mA Iline = 140 mA VLN(exR) VLN(T) ICC VCC RCCint DC line voltage with an external resistor RVA DC line voltage variation with temperature referred to 25 C internal current consumption supply voltage for peripherals equivalent supply voltage impedance RVA(LN-REG) = 82 k RVA(SLPE-REG) = 27 k Tamb = -25 to +75 C VCC = 3.2 V Ip = 0 mA Ip = 0.5 mA 3.45 - - 3.7 - - - - - 2.8 - 3.7 1.6 2.5 4 - 3.6 4.75 30 1.3 3.2 550 3.95 - - 4.3 7.0 - - - 1.6 - 620 V V V V V V V mV mA V
LED supply (pin ILED) Iline(h) Iline(l) ILED(max) highest line current for ILED < 0.6 mA lowest line current for maximum ILED maximum supply current available - - - 18 76 19.5 - - - mA mA mA
Microphone amplifier (pins MIC+, MIC- and GAS) Zi input impedance differential between pins MIC+ and MIC- single-ended between pins MIC+/MIC- and VEE Gvtx Gvtx(f) Gvtx(T) CMRR Gvtxr Vnotx voltage gain from MIC+/MIC- to LN gain variation with frequency referred to 1 kHz gain variation with temperature referred to 25 C common mode rejection ratio gain voltage reduction range noise output voltage at pin LN; pins MIC+ / MIC- shorted through 200 external resistor connected between GAS and REG psophometrically weighted (P53 curve) VMIC = 2 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C - - 50.6 - - - - - 64 32 51.8 0.2 0.3 80 - -70.5 - - 53 - - - 13 - k k dB dB dB dB dB dBmp
1997 Mar 27
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Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TEA1113
MAX.
UNIT
Dynamic limiter and microphone mute (pin DLS/MMUTE) DYNAMIC LIMITER BEHAVIOUR VLN(max)(p-p) maximum output voltage swing on the line (peak-to-peak value) THD tatt trel total harmonic distortion attack time, VMIC jumps from 2 mV up to 20 mV release time, VMIC jumps from 20 mV down to 2 mV Iline = 15 mA; Vref = 3.7 V Iline = 4 mA VMIC = 4 mV (RMS) + 10 dB VMIC = 4 mV (RMS) + 15 dB CDLS = 470 nF CDLS = 470 nF 3.8 - - - - 50 4.65 1.6 - - 1.5 150 - - 2 10 5 - % % ms ms V
MICROPHONE MUTE INPUT Gvtxm VIL IIL trel gain reduction LOW level input voltage LOW level input current release time after a LOW level on pin DLS/MMUTE CDLS = 470 nF DLS/MMUTE = LOW - VEE - 0.4 40 - 80 - 60 30 - VEE + 0.3 - - dB V A ms
Receiving amplifier (pins IR, QR and GAR) Zi Gvrx Gvrx(f) Gvrx(T) Gvrxr Vo(rms) input impedance voltage gain from IR to QR gain variation with frequency referred to 1 kHz gain variation with temperature referred to 25 C gain voltage reduction range maximum output voltage (RMS value) VIR = 4 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C external resistor connected between GAR and QR Ip = 0 mA sine wave drive; RL = 150 ; THD = 2% Ip = 0 mA sine wave drive; RL = 450 ; THD = 2% Vnorx(rms) noise output voltage at pin QR (RMS value) RL = 150 ; IR open-circuit; psophometrically weighted (P53 curve) - 30.3 - - - 240 350 - 20 31.3 0.2 0.3 - 290 410 -86 - 32.3 - - 12 - - - k dB dB dB dB mV mV dBVp
Automatic gain control (pin AGC) Gvtrx gain control range for microphone and receiving amplifiers with respect to Iline = 15 mA highest line current for maximum gain lowest line current for minimum gain Iline = 85 mA - 5.8 - dB
Istart Istop
- -
25 59
- -
mA mA
1997 Mar 27
13
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
SYMBOL Zi Gvdtmf Gvdtmf(f) Gvdtmf(T) Gvct PARAMETER CONDITIONS - VDTMF = 25 mV (RMS); MUTE = LOW f = 300 to 3400 Hz Tamb = -25 to +75 C RL = 150 ; VDTMF = 25 mV (RMS) 24.2 - - - MIN. TYP. -
TEA1113
MAX.
UNIT
DTMF amplifier (pin DTMF) input impedance voltage gain from DTMF to LN gain variation with frequency referred to 1 kHz gain variation with temperature referred to 25 C voltage gain from DTMF to QR (confidence tone) 20 25.4 0.2 0.5 -18 k dB dB dB dB 26.6 - - -
Mute function (pin MUTE) VIL VIH IMUTE Gvtrxm LOW level input voltage HIGH level input voltage input current gain reduction for microphone and receiving amplifiers MUTE = HIGH MUTE = LOW VEE - 0.4 VEE + 1.5 - - - - 1.25 80 VEE + 0.3 3 - V A dB VCC + 0.4 V
1997 Mar 27
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1997 Mar 27
handbook, full pagewidth
Philips Semiconductors
APPLICATION INFORMATION
Rprot 10 Rast1 130 k CIR IR ILED QR CGAR 100 pF GAR MIC+ DTMF BC558 470 k supply for peripheral circuits Rpd6 BF473 BC547 68 k Rast2 3.92 k VCC Rpd4 Rpd5 470 k LN RCC 619
a/b
VDR 95 V
4x BAS11
Telephone line
TEA1113
CGARS 1 nF SLPE GAS CVCC 100 F RDLS CDLS 3.3 k 100 pF RSLPE 20 4.7 F CREG 470 nF CGAS REG AGC VEE DLS/MMUTE MIC- MUTE
b/a
BZV85C10
signal from dial and control circuits
Low voltage versatile telephone transmission circuit with dialler interface
15
Rast3 390 Zbal Rpd1 470 k BC547 BZX79C10
PD input
BSN254
Rlimit 3.9
Rpd2 470 k
Rpd3 1 M
MGD020
Product specification
TEA1113
Fig.14 Typical application of the TEA1113 in sets with Pulse Dialling or Flash facilities.
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PACKAGE OUTLINES DIP16: plastic dual in-line package; 16 leads (300 mil)
TEA1113
SOT38-4
D seating plane
ME
A2
A
L
A1
c Z e b1 b 16 9 b2 MH wM (e 1)
pin 1 index E
1
8
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.2 0.17 A1 min. 0.51 0.020 A2 max. 3.2 0.13 b 1.73 1.30 0.068 0.051 b1 0.53 0.38 0.021 0.015 b2 1.25 0.85 0.049 0.033 c 0.36 0.23 0.014 0.009 D (1) 19.50 18.55 0.77 0.73 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.10 e1 7.62 0.30 L 3.60 3.05 0.14 0.12 ME 8.25 7.80 0.32 0.31 MH 10.0 8.3 0.39 0.33 w 0.254 0.01 Z (1) max. 0.76 0.030
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT38-4 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-01-14
1997 Mar 27
16
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
TEA1113
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp 1 e bp 8 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 0.069 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 0.24 0.23 L 1.05 0.041 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.020 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012
0.0098 0.057 0.0039 0.049
0.019 0.0098 0.39 0.014 0.0075 0.38
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-1 REFERENCES IEC 076E07S JEDEC MS-012AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 91-08-13 95-01-23
1997 Mar 27
17
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
TEA1113
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Mar 27
18
Philips Semiconductors
Product specification
Low voltage versatile telephone transmission circuit with dialler interface
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1113
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Mar 27
19
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417027/1200/02/pp20
Date of release: 1997 Mar 27
Document order number:
9397 750 00632

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